MMBT5401

netwing 2022-04-28

Product attributes
Type Description

Discrete category semiconductor products
Transistor Bipolar Transistor (BJT) - Single
Manufacturer onsemi
Series-
Packaging tape (TR)
Shear band (CT)
Part status shutdown
Transistor type PNP
Current collector (Ic) (maximum) 600 mA
Voltage - collector breakdown (maximum) 150 V
Vce saturation pressure drop (maximum) at different Ib and Ic: 500mV @ 5mA, 50mA
Current collector cutoff (maximum) 50nA (ICBO)
DC current gain (hFE) at different Ic and Vce (minimum value) 60 @ 10mA, 5V
Power - maximum 350 mW
Frequency - transition 300MHz
Working temperature -55 ° C~150 ° C (TJ)
Installation type: Surface mount type
Package/Housing TO-236-3, SC-59, SOT-23-3
Supplier Device Packaging SOT-23-3
Basic product number MMBT5401

Attachment Download

MMBT5401.pdf

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MMBT5551

BTA24-600BW