IRF640NPBF

netwing 2022-05-03

Product attributes
Type Description

Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer Infineon Technologies
Series HEXFET ®
Packaging pipe fittings
Part status for sale
FET type N channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 200 V
Current at 25 ° C - Continuous drain (Id) 18A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V
Conduction resistance at different IDs and Vgs (maximum value) 150 milliohms @ 11A, 10V
Vgs (th) at different IDs (maximum) 4V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum) 67 nC @ 10 V
Vgs (maximum value) ± 20V
Input capacitance (Ciss) at different Vds (maximum value) 1160 pF @ 25 V
FET function-
Power dissipation (maximum) 150W (Tc)
Working temperature -55 ° C~175 ° C (TJ)
Installation type through-hole
Supplier Device Packaging TO-220AB
Packaging/Housing TO-220-3
Basic product number IRF640

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