RZM002P02T2L

netwing 2022-05-05

Product attributes
Type Description

Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer Rohm Semiconductor
Series-
Packaging tape (TR)
Shear band (CT)
Part status for sale
FET type P channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 20 V
Current at 25 ° C - Continuous drain (Id) 200mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On) 1.2V, 4.5V
Conduction resistance at different IDs and Vgs (maximum value) 1.2 ohms @ 200mA, 4.5V
Vgs (th) at different IDs (maximum) 1V @ 100 µ A
Gate charge (Qg) at different Vgs (maximum) 1.4 nC @ 4.5 V
Vgs (maximum value) ± 10V
Input capacitance (Ciss) at different Vds (maximum value) 115 pF @ 10 V
FET function-
Power dissipation (maximum) 150mW (Ta)
Working temperature 150 ° C (TJ)
Installation type: Surface mount type
Supplier Device Packaging VMT3
Packaging/Housing SOT-723
Basic product number RZM002

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rzm002p02t2l-e.pdf

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