STP110N8F6

netwing 2022-05-10

Product attributes
Type Description

Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer STMicroelectronics
Series STripFET ™ F6
Packaging pipe fittings
Part status for sale
FET type N channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 80 V
Current at 25 ° C - Continuous drain (Id) 110A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V
Conduction resistance at different IDs and Vgs (maximum value) 6.5 milliohms @ 55A, 10V
Vgs (th) at different Ids (maximum value) 4.5V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum) 150 nC @ 10 V
Vgs (maximum value) ± 20V
Input capacitance (Ciss) at different Vds (maximum value) 9130 pF @ 40 V
FET function-
Power dissipation (maximum) 200W (Tc)
Working temperature -55 ° C~175 ° C (TJ)
Installation type through-hole
Supplier Device Packaging TO-220
Packaging/Housing TO-220-3
Basic product number STP110

Attachment Download

STP110N8F6.pdf

Click to download

AO4468

AO4616