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TK35A65W，S5X

netwing 2024-04-20

TK35A65W Application Application Application Application • Switching Voltage Stabilizer 2.2 2.2. Characteristics: Characteristics: (1) Low drain source conduction resistance: RDS (ON)=0.068 Ω (typical value), using super junction structure: DTMOS (2) Easy to control gate switching (3) Enhanced mode: Vth=2.5 to 3.5 V (VDS=10 V, ID=2.1 mA)

Toshiba DTMOSIV series MOSFETs
Toshiba DTMOSIV MOSFET adopts the most advanced single epitaxial process, which can reduce R by 30% DS (on), and the quality factor (FOM) of MOSFET is compared to its predecessor DTMOSIII. This reduction in DS (on) of R can accommodate chips with the same packaging as lower RDS (on). This helps to improve efficiency and reduce the size of the power supply. Toshiba DTMOSIV MOSFET is an ideal choice for use with switch regulators.

features

Low leakage source conduction resistance
Easy to control gate switch
Reduced R by 30% DS (on) compared to the previous generation product
The power switch has the highest efficiency

Reduce C operating system
Packaging options include DPAK, IPAK, D2PAK, 8mm x 8mm DFN, I2PAK, TO-220, TO-220SIS, TO-247, TO-3P (N), and TO-3P (L)

application

Switching mode power supply (SMPS)
lighting

Power Factor Control (PFC)
Industrial (including UPS)

block diagram

Attachment Download

TB6600HG

TLP5752(D4-TP,E(T