FQD13N06LTM

netwing 2022-05-06

Product attributes
Type Description
Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer onsemi
Series QFET ®
Packaging tape (TR)
Shear band (CT)
Part status for sale
FET type N channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 60 V
Current at 25 ° C - Continuous drain (Id) 11A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) 5V, 10V
Conduction resistance at different IDs and Vgs (maximum value) 115 milliohms @ 5.5A, 10V
Vgs (th) at different Ids (maximum value) 2.5V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum) 6.4 nC @ 5 V
Vgs (maximum value) ± 20V
Input capacitance (Ciss) at different Vds (maximum value) 350 pF @ 25 V
FET function-
Power dissipation (maximum) 2.5W (Ta), 28W (Tc)
Working temperature -55 ° C~150 ° C (TJ)
Installation type: Surface mount type
Supplier Device Packaging TO-252AA
Package/Housing TO-252-3, DPak (2 leads+connectors), SC-63
Basic product number FQD13N06

Attachment Download

C236914_N沟道60V11A_2018-11-08.PDF

Click to download

BS2130F-GE2

AO3480