AO3480

netwing 2022-05-09

Product attributes
Type Description

Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer Alpha&Omega Semiconductor Inc
Series-
Packaging tape (TR)
Part status shutdown
FET type N channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 30 V
Current at 25 ° C - Continuous drain (Id) 5.7A (Ta)
Drive voltage (maximum Rds On, minimum Rds On) 2.5V, 10V
Conduction resistance at different IDs and Vgs (maximum value) 26.5 milliohms @ 5.7A, 10V
Vgs (th) at different IDs (maximum value) 1.45V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum) 10 nC @ 4.5 V
Vgs (maximum value) ± 12V
Input capacitance (Ciss) at different Vds (maximum) 630 pF @ 15 V
FET function-
Power dissipation (maximum) 1.4W (Ta)
Working temperature -55 ° C~150 ° C (TJ)
Installation type: Surface mount type
Supplier Device Packaging SOT-23-3
Package/Housing TO-236-3, SC-59, SOT-23-3

Attachment Download

FQD13N06LTM

AO4468